rgp25a thru rgp25m document number 88703 19-sep-05 vishay general semiconductor www.vishay.com 1 do-201ad p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 glass passivated junction fast switching rectifier major ratings and characteristics i f(av) 2.5 a v rrm 50 v to 1000 v i fsm 100 a t rr 150 ns, 250 ns, 500 ns i r 5.0 a v f 1.3 v t j max. 175 c features ? superectifier struct ure for high reliability condition ? cavity-free glass-passivated junction ? fast switching for high efficiency ? low leakage current, typical i r less than 0.2 a ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 260 c, 40 seconds typical applications for general purpose of medium frequency rectifica- tion mechanical data case: do-201ad, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol rgp25a rgp25b rgp25d rgp25g rgp25j rgp25k rgp25m unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 2.5 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at t a = 55 c i r(av) 100 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88703 19-sep-05 rgp25a thru rgp25m vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol rgp25a rgp25b rgp25d rgp25g rgp25j rgp25k rgp25m unit maximum instantaneous forward voltage at 2.5 a v f 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 200 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 500 ns typical junction capacitance at 4.0 v, 1 mhz c j 60 pf parameter symbol rgp25a rgp25b rgp25d rgp25g rgp25j rgp25k rgp25m unit typical thermal resistance (1) r ja 20 c/w figure 1. forward current derating curve am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 20 40 60 8 0 100 120 140 160 1 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.375" (9.5mm) lead length resisti v eor ind u cti v e load figure 2. maximum non-repetitive peak forward surge current 1 10 100 10 100 peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz t j = t j max. 8 .3 ms single half sine- w a v e
rgp25a thru rgp25m document number 88703 19-sep-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1.0 10 instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1% d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1.0 10 20 percent of rated peak re v erse v oltage (%) i ns t an t aneo u s r e v erse l ea k age c u rrent ( a) t j = 100 c t j = 125 c t j = 25 c t j = 75 c figure 5. typical junction capacitance 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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